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UT=000526090400108 OR UT=000535174000057 OR UT=000502270800021


BibTeX entries:
@ARTICLE{Černohorský:20:Modeling,
	 author = {Černohorský, O. AND Grym, J. AND Faitová, H. AND Bašinová, N. AND Kučerová, .. AND Yatskiv, R. AND Veselý, J.},
	 title = {Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors},
	 journal = {Crystal Growth & Design},
	 fulljournal = {Crystal Growth & Design},
	 volume = {20},
	 number = {5},
	 pages = {3347--3357},
	 year = {2020},
	 issn = {1528-7483,1528-7505},
	 doi = {10.1021/acs.cgd.0c00144},
	 KFPPid = {2173},
}

@ARTICLE{Tiagulskyi:20:Highly,
	 author = {Tiagulskyi, S. AND Yatskiv, R. AND Faitová, H. AND Kučerová, .. AND Roesel, D. AND Vaniš, J. AND Grym, J. AND Veselý, J.},
	 title = {Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates},
	 journal = {Nanomaterials},
	 fulljournal = {Nanomaterials},
	 volume = {10},
	 number = {3},
	 pages = {508},
	 eid = {508},
	 year = {2020},
	 issn = {2079-4991},
	 doi = {10.3390/nano10030508},
	 KFPPid = {2174},
}

@ARTICLE{Basinova:19:Highly,
	 author = {Basinova, N. AND Cernohorsky, O. AND Grym, J. AND Kucerova, S. AND Faitova, H. AND Yatskiv, R. AND Vanis, J. AND Vesely, J. AND Maixner, J.},
	 title = {Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods},
	 journal = {Crystals},
	 fulljournal = {Crystals},
	 volume = {9},
	 number = {11},
	 pages = {566},
	 eid = {566},
	 year = {2019},
	 issn = {2073-4352},
	 doi = {10.3390/cryst9110566},
	 KFPPid = {2035},
}


Bibitems:

\bibitem[{Černohorský et~al.(2020)}]{Černohorský:20:Modeling}
Černohorský, O., Grym, J., Faitová, H., Bašinová, N., Kučerová, .., Yatskiv, R., Veselý, J., Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors. {\it Crystal Growth & Design.} {\bf 20}(5): 3347--3357, 2020.

\bibitem[{Tiagulskyi et~al.(2020)}]{Tiagulskyi:20:Highly}
Tiagulskyi, S., Yatskiv, R., Faitová, H., Kučerová, .., Roesel, D., Vaniš, J., Grym, J., Veselý, J., Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. {\it Nanomaterials.} {\bf 10}(3): 508, 2020.

\bibitem[{Basinova et~al.(2019)}]{Basinova:19:Highly}
Basinova, N., Cernohorsky, O., Grym, J., Kucerova, S., Faitova, H., Yatskiv, R., Vanis, J., Vesely, J., Maixner, J., Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods. {\it Crystals.} {\bf 9}(11): 566, 2019.