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@ARTICLE{Silva:20:HfO2–Al2O3,
	 author = {Silva, J.P.B. AND Sekhar, K.C. AND Veltruská, K. AND Matolín, V. AND Negrea, R.F. AND Ghica, C. AND Oliveira, M.J.S. AND Moreira, J.A. AND Pereira, M. AND Gomes, M.J.M.},
	 title = {HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film},
	 journal = {ACS Appl. Electron. Mater.},
	 fulljournal = {ACS Applied Electronic Materials},
	 volume = {2},
	 number = {9},
	 pages = {2780--2787},
	 year = {2020},
	 issn = {2637-6113,2637-6113},
	 doi = {10.1021/acsaelm.0c00480},
	 KFPPid = {2115},
}